| Autori | Titlu | Publicatia | An aparitie |
| L.BRAESCU, A.M.BALINT, ST. BALINT | ADMISSIBLE MANOEUVRES IN PULLING RATE FOR SILICON FILAMENT GROWN FROM THE MELT BY E.F.G. METHOD | JOURNAL OF CRYSTAL GROWTH/425 | 2001 |
| V. IORDAN, ST. BALINT | NUMERICAL CAPTURING OF SOME HYDRODYNAMICAL SHOCKS | JOURNAL OF COMPUT. AND APPLIED MATH./297 | 1999 |
| A.M.BALINT, TH. LEVY,, ST. BALINT | THE DOPANT FIELDS IN UNIFORM-DIFFUSION-LAYER, GLOBAL-THERMAL-CONVECTION AND PRECRYSTALLIZATION-ZONE | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING/1 | 2000 |